Efficient solution to selective wet etching of ultra-thick copper sacrificial layer with high selective etching ratio, 16th International Solid-State Sensors, Actuators and Microsystems Conference.Ĭhoi, T.-S., & Hess, D. Journal of Applied Electrochemistry, 35(127–132). Selective etching of CoFeNiCU/Cu multilayers. Microelectronic Engineering, 76, 153–159. Metallurgical and Materials Transactions A, 48, 1414–1424.Ĭastoldi, L., Visalli, G., Morin, S., Ferrari, P., Alberici, S., Ottaviani, G., Corni, F., Tonini, R., Nobili, C., & Bersani, M. Proceedings of the fifth international symposium on cleaning technology in semiconductor device manufacturing (Ruzyllo J & Novak RE (Eds.), p. Proceedings 21, International Nuclear Information System, 49(22). International conference on applied physics of condensed matter and of the scientific conference advanced fast reactors. Matylitskaya, V., Partel, S., & Kasemann, S. The Journal of Microelectromechanicalsystems, 23(2), 372–379. Scotti, G., Kanninen, P., Kallio, T., & Franssila, S. Journal of Vacuum Science and Technology B, 20(5), 1907–1913. Gabette, L., Segaud, R., Fadloun, S., Avale, X., & Besson, P. Microelectronics Reliability, 43, 1771–1776. Muraa, G., Vanzi, M., Stangoni, M., Ciappa, M., & Fichtner, W. Microelectronic Engineering, 70, 109–114. E., Baumann, H., Balachandran, K., & Todi, R. Journal of Materials Science, 28, 6261–6273. Jansen (Eds.), Plasma Deposited Thin Films (Vol. Silicon nitride and other insulator films. Microelectronic Engineering, 77, 230–241.Īdams, A. Zubel, I., Barycka, I., Kotowska, K., & Kramkowska, M. Journal of the Electrochemical Society, 137, 3612. Seidel, H., Csepregi, L., Hueberger, A., & Baumgärtel, H. ECS Journal of Solid State Science and Technology, 2(9), 380–383. Liu, L., Lin, F., Heinrich, M., Aberle, A. Journal of the Electrochemical Society, 108, 365–372. The Journal of Chemical Physics, 95, 2897. The Journal of Microelectromechanical Systems, 12(6), 761–778. International Journal of Machine Tools and Manufacture, 39, 1103–1116. Handbook of 3D Integraion: 3D process technology, chapter 16: Backside thinning and stress-relief techniques for silicon wafers, pp. Landesberger, C., Paschke, C., Spöhrle, H-P., & Bock, K. Proceedings of the fifth international symposium on cleaning technology in semiconductor device manufacturing, proceeding volume 97- electrochemical society 35. Keywordsĭutta, S., Imran, M., Kumar, P., Pal, R., Datta, P., & Chatterjee, R. Later, specific solvent-based cleanings will be introduced as innovative solutions studied for specific applications, including deep silicon etch, piezoelectric materials definitions, and lift-off processes. Standard wet cleaning, preparatory to dielectrics or metals deposition, will be thoroughly presented first. Surface cleaning and photoresist removal step will be then faced within this chapter. Such metal layers play a fundamental role in signal routing and act as physical barrier or seed layer for Electrochemical Deposition (ECD). After e brief reference to dielectrics etching, a subject widely covered in literature, attention will be dedicated to metal etching, and in particular to gold and aluminum, titanium, and titanium–tungsten alloys. Precisely, silicon isotropic and anisotropic wet etching will be tackled and discussed first, as well-established techniques involved in silicon polishing and silicon patterning exploiting silicon crystalline properties, respectively. 12.2) in the most significative steps involved in MEMS sensors and actuators manufacturing. Within this figure of merit, specific focus will be dedicated to wet etching (Sect. Latest advancements in MEMS technologies and MEMS portfolio widening, with increasingly demanding performance and stringent features, imposed a rapid and flawless update of wet etching and cleaning technologies, to ensure devices’ long-term reliability. The following chapter aim is to provide an overview on wet etching and cleaning procedures involved in Micro Electro-Mechanical Systems (MEMS) fabrication. All wet processes are fundamentally hinged on chemical and physical properties of specific liquid formulations in which each component, solvent or chemically active species, is chosen to selectively attack (etch) or remove (clean) target materials or substrates. Wet chemical processes are vastly employed in microelectronics fabrication industry, either for actively defining functional features or as cleaning and refining steps, preparatory to other key processes.
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